尊龙凯时人生就是搏רҵÑб¬·¢²úÀο¿¹âÏËÑÓ³ÙÏß,ÊÇÒ»¼ÒרҵµÄÀο¿¹âÏËÑÓ³ÙÏß³§¼Ò£¬ÓкܺõÄÀο¿¹âÏËÑÓ³ÙÏß¼ÛÇ®¡£ÎÒÃÇÑб¬·¢²úµÄÀο¿¹âÏËÑÓ³ÙÏßÆÕ±éÓ¦ÓÃÓÚº½Ìì¡¢º½¿Õ¡¢µçÁ¦¡¢Ìú·¡¢Ò½ÁÆ¡¢½»Í¨¡¢Í¨Ñ¶¡¢µÈ¸÷´óÁìÓò¡£ÆæÒìµÄÑÓ³Ù»úеװÖã¬Ò»Á¬¿É¿¿ÊÂÇ飻¿íÑÓ³Ù¹æÄ££¬²¢¿É°´Óû§ÒªÇó¶¨ÖÆ£»ÑÓ³Ù¾«¶È¸ß£¬¿ÉµÖ´ïpsÊýÄ¿¼¶£»¸ß¿É¿¿ÐÔ£»½ÏµÍµÄÆ«ÕñÏà¹ØÏûºÄ£¨<0.1dB£©£»½ÏµÍµÄ²åÈëת±ä£¨<0.5dB£©£»¾«Á·½ô´ÕµÄ½á¹¹

The F-tone Netwoeks  balanced photodetector is a compact module consisting of two 100 GHz waveguide-integrated photodiodes on a single chip. As a single device, this configuration ensures excellent uniformity of the paired photodiodes performance; biasing is achieved via an integrated business network. Due to the optimized design of the waveguide and Photodiode, even at high optical power, a linear frequency response can be guaranteed.  The integrated termination allows an excellent match of the electrical output signal. Custom configurations are available, such as FT-PDV matched pairs and quad sets, including connector customization and fiber matching to enable coherent detection.  A 90 GHz version of this module is also available upon request.

The FT-DV412xR family contains two photodetector devices, with optimized ultrafast photodiodes with up to 100 GHz bandwidth. Both photodetectors, the XPDV4120 (f3dB > 90 GHz) and XPDV4121R (f3dB >100 GHz), are designed with waveguide-integrated photodiodes and show an extremely flat frequency response in power and in phase. The on-chip integrated bias network with optimized RF design in particular, ensures undisturbed frequency response from DC to the 3 dB cut-off frequency and saves costs for internal bias-tees. The devices are especially developed for optimal RF performance revealing virtually no pulse response ringing.

Both photodetectors are characterized in the frequency domain by using a heterodyne technique. In the time domain, a femtosecond pulse source and a 65 GHz sampling oscilloscope are used to measure the pulse response.

The photodetector is designed to exhibit an optimized frequency response in both power and phase. It is ideally suited for OC-768/STM-256 long haul systems. The high power capability of up to 10 dBm allows for use of optical amplification at the detector input, and results in a high output voltage swing of up to 1V avoiding the need for electrical amplification. The photodetector is optimized for dual operations at 1310 nm and 1550 nm.

A waveguide integrated pin diode provides an excellent linearity, high responsivity and a superior flatness of the RF response. An integrated biasing guarantees a highly reliable component.

The photodetector contains a waveguide-integrated pin-photodiode (PD), designed to exhibit optimized high frequency performance in both, amplitude and phase. A linear response up to an optical input power of 10 dBm is a feature of these modules, enabling to drive subsequent decision circuits of communication systems directly. The pin-photodiode with on-chip integrated bias network in conjunction with a blocking capacitor for AC coupling is the best choice for 44 Gb/s applications.