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8-10mw 1653.5nm Butterfly Laser Diode for Gas Detection

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Description

The 8-10mw 1653.5nm Butterfly Laser Diode for gas detection (ultra narrow linewidth 1653nm butterfly laser diode) are provided in a 14-pin butterfly package.The equipment adopts the high-quality InGaAsP/InP strained MQW-DFB laser chip and is outfitted with a built-in cooler to prevent the equipment from overheating.It delivers single-mode optic fiber output and high-speed modulation at a maximum output power of 10MW.This series of laser equipment is designed based on external-cavity lasers with a built-in fiber Bragg grating which ensures a stabilized wavelength output,ultra-narrow spectral linewidth,and outstanding side-mode suppression ratio.It is commonly used in many scientific research fields as the optical gas detector,optical chemical sensor,optical testing equipment,fiber performance testing equipment,and the light source of OTDR systems.

 

Features
¡ô The Butterfly Laser Diode are capable of producing laser light at a stabilized wavelength.
¡ô Typical values for the equipment are up to 1653.3nm for the peak wavelength, spectral linewidth up to 100 KHz, minimum output power 8MW, and minimum SMSR 35dB.
¡ô The equipment is supplied with a thermoelectric cooler and thermistor.

 

Absolute Maximum Ratings 

Parameter Symbol Condition Min. Max. Unit
Reverse Voltage Vr     2 V
Forward Current If     120 mA
Forward Voltage Vf Iop   2.5 V
Operating Temperature Tc Iop 0 60 °C
Storage Temperature Tlaser Iop -40 85 °c
Thermoelectric Cooler Voltage Vtec     3.0 V
Thermoelectric Cooler Current Ltec   -40 1.8 A
Storage Temperature Tstg Unbiased 5 85 °C
Storage Humidity -     85 %RH
Lead Soldering Temperature Stemp     260 °C
Lead Soldering Time Stime     10 sec 

 

Optical & Electrical Characteristics 

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Optical Output Power Po CW 6 8 - mW
Threshold Current Ith CW - 25 35 mA
Operating Current Iop Po=PL, TL=25 °C - 80 100 mA
Operation Voltage Vop Po=PL - 1.2 2.0 V
Slope Efficiency η Po=PL, TL=25 °C   0.1 - mW/mA
Peak Wavelength λP Po=PL, TL=25 °C 1652 1653.5 1655 nm
Side Mode Suppression SMST Po=PL, TL=25 °C 35 - - dB
Line width Δλ Po=PL, TL=25 °C - - 10 MHz
Thermistor Resistance Rt T=25¡æ 9.5 - 10.5
Thermistor B Constant B T=25¡æ - 3900 - k
Laser Set temperature TL - 15 25 35 ¡æ
Monitor Current Imon Vrpd=5v 50 - 150  
Monitor Dark Current ID Vrpd=5v - - 200 nA
TEC Current IC ΔT=40¡æ - - 1.5 A
TEC Voltage VC ΔT=40¡æ - - 2.0

 

Pin Description

1 Thermistor 8 Ground
2 Thermistor 9 Ground
3 LD (N) bias 10 Ground
4 Detector (P) 11 LD (P), ground
5 Detector (N) 12 LD (N), RF modulation
6 TEC (+) 13 LD (P), ground
7 TEC (-) 14 Ground 
 
 
 
 
Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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